Paramagnetic spin Hall magnetoresistance

Spin Hall magnetoresistance (SMR) refers to a resistance change in metallic film reflecting the magnetization direction of magnet attached film. The mechanism this phenomenon is spin exchange between conduction-electron spins and at interface. SMR has been used read out information written small detect dynamics, but it limited magnets; magnetic ordered phases or instability phase transition believed be indispensable. Here, we report observation paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous combined with Pt can attributed spin-transfer torque acting on localized GGG. We determine efficiencies spin-flip scattering Pt/GGG interface, demonstrate these quantities tuned external fields. results clarify spin-transport metal/paramagnetic which gives new insight into spintronic manipulation states systems.